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| Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES * Low forward volt drop * Fast switching * Soft recovery characteristic * Reverse surge capability * High thermal cycling performance * Low thermal resistance BYV32E, BYV32EB series SYMBOL QUICK REFERENCE DATA VR = 100/ 150 V/ 200 V VF 0.85 V IO(AV) = 20 A IRRM = 0.2 A trr 25 ns a1 1 k2 a2 3 GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV32E series is supplied in the SOT78 conventional leaded package. The BYV32EB series is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) 1 anode 2 (a) cathode (k) SOT78 (TO220AB) tab SOT404 tab 2 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VRWM VR IO(AV) IFRM IFSM PARAMETER Peaqk repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage square wave; = 0.5; Tmb 115 C t = 25 s; = 0.5; Tmb 115 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 s; = 0.001 per diode Non-repetitive peak reverse tp = 100 s current per diode Storage temperature Operating junction temperature Average rectified output current (both diodes conducting) Repetitive peak forward current per diode Non-repetitive peak forward current per diode CONDITIONS BYV32E / BYV32EB -40 MIN. -100 100 100 100 MAX. -150 150 150 150 20 20 125 137 0.2 0.2 150 150 -200 200 200 200 UNIT V V V A A A A A A C C IRRM IRSM Tstg Tj 1 It is not possible to make connection to pin 2 of the SOT404 package August 2001 1 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage CONDITIONS Human body model; C = 250 pF; R = 1.5 k BYV32E, BYV32EB series MIN. - MAX. 8 UNIT kV THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS per diode both diodes SOT78 package, in free air SOT404 and SOT428 packages, pcb mounted, minimum footprint, FR4 board MIN. TYP. MAX. UNIT 60 50 2.4 1.6 K/W K/W K/W K/W ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr1 trr2 Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Reverse recovery time Forward recovery voltage CONDITIONS IF = 8 A; Tj = 150C IF = 20 A VR = VRWM; Tj = 100 C VR = VRWM IF = 2 A; VR 30 V; -dIF/dt = 20 A/s IF = 1 A; VR 30 V; -dIF/dt = 100 A/s IF = 0.5 A to IR = 1 A; Irec = 0.25 A IF = 1 A; dIF/dt = 10 A/s MIN. TYP. 0.72 1.00 0.2 6 8 20 10 1 MAX. 0.85 1.15 0.6 30 12.5 25 20 UNIT V V mA A nC ns ns V August 2001 2 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV32E, BYV32EB series I dI F dt F 0.5A IF t rr time 0A I rec = 0.25A IR trr2 Q I I s 10% 100% R rrm I = 1A R Fig.1. Definition of trr1, Qs and Irrm Fig.4. Definition of trr2 I F 15 PF / W Vo = 0.7 V Rs = 0.0183 Ohms BYV32 Tmb(max) / C 114 D = 1.0 10 0.5 0.2 0.1 126 time VF V VF time fr 5 I tp D= tp T t 138 T 0 0 5 IF(AV) / A 10 150 15 Fig.2. Definition of Vfr Fig.5. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x D. PF / W Vo = 0.7 V Rs = 0.0183 Ohms R 10 BYV32 1.9 2.2 Tmb(max) / C a = 1.57 126 8 2.8 4 130.8 D.U.T. Voltage Pulse Source 6 135.6 4 140.4 Current shunt to 'scope 2 145.2 0 0 2 4 IF(AV) / A 6 8 150 10 Fig.3. Circuit schematic for trr2 Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). August 2001 3 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYV32E, BYV32EB series trr / ns 1000 100 Qs / nC 100 IF=10A IF=10A 5A 2A 1A 10 IF=1A 10 1 1.0 1 10 dIF/dt (A/us) 100 1.0 10 -dIF/dt (A/us) 100 Fig.7. Maximum trr at Tj = 25 C; per diode Fig.10. Maximum Qs at Tj = 25 C; per diode 10 Irrm / A 10 Transient thermal impedance, Zth j-mb (K/W) IF=10A 1 IF=1A 1 0.1 0.1 0.01 P D tp D= tp T t 0.01 1 10 -dIF/dt (A/us) 100 0.001 1us T 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV32E 10s Fig.8. Maximum Irrm at Tj = 25 C; per diode Fig.11. Transient thermal impedance; per diode; Zth j-mb = f(tp). 30 IF / A Tj=150 C Tj=25 C 20 10 typ max 0 0 0.5 VF / V 1 1.5 Fig.9. Typical and maximum forward characteristic per diode; IF = f(VF); parameter Tj August 2001 4 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged MECHANICAL DATA Dimensions in mm Net Mass: 2 g BYV32E, BYV32EB series 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". August 2001 5 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g 10.3 max BYV32E, BYV32EB series 4.5 max 1.4 max 11 max 15.4 2.5 0.85 max (x2) 2.54 (x2) 0.5 Fig.13. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.14. SOT404 : soldering pattern for surface mounting. Notes 1. Epoxy meets UL94 V0 at 1/8". August 2001 6 Rev 1.300 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged DEFINITIONS Data sheet status Objective specification Product specification Limiting values BYV32E, BYV32EB series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 2001 7 Rev 1.300 |
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